Near-infrared free carrier absorption in heavily doped silicon

Near-infrared free carrier absorption in heavily doped silicon

Infrared surface plasmons on heavily doped silicon

Monas Shahzad, Gautam Medhi, Robert E. Peale, Walter R. Buchwald, Justin W. Cleary, Richard Soref, Glenn D. Boreman, and Oliver Edwards Department of Physics, University of Central Florida, Orlando, Florida 32816, USA Solid State Scientific Corporation, 27-2 Wright Road, Hollis, New Hampshire 03049, USA Sensors Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio 45...

Absorption near band edges in heavily doped GaAs.

The optical-absorption coefficient o.(m) in heavily doped nand p-type GaAs is evaluated for comparison with the observed values of Casey et al. The purpose is to test the theory of electrons in heavily disordered systems derived by Sa-yakanit and the absorption matrix element (ME) which follows from this theory. The present calculation of a(m) begins with the density of electron states (DOS) an...

Infrared response of multiple-component free-carrier plasma in heavily doped p-type GaAs

Infrared response of multiple-component free-carrier plasma in heavily doped p-type GaAs" (2001).

Free-carrier absorption in Be- and C-doped GaAs epilayers and far infrared detector applications

Far infrared ~FIR! absorption, reflection, and transmission in heavily doped p-GaAs multilayer structures have been measured for wavelengths 20–200 mm and compared with the calculated results. Both Be ~in the range 3310– 2.6310 cm! and C (1.8310– 4.7310 cm)-doped structures were studied. It is found that the observed absorption, reflection, and transmission are explained correctly by the model ...